Atomistic Simulation of Electromigration in Nanoscale Metallic Interconnects

Kristi Harris, University of Maryland, Baltimore County

The primary cause of integrated circuit failure is the effect of electromigration on the metallic wires that connect circuit components. As interconnect dimensions shrink towards the nanoscale, it is increasingly important to develop a physical understanding of electromigration failure mechanisms on an atomistic scale. In our research, we are investigating the electromigration effect on nanoscale metallic structures through atomistic modeling and simulation.

The embedded interconnects in integrated circuits have specific size, structural, and microstructural characteristics that help determine the dominant electromigration failure mechanism. We are currently in development of a kinetic Monte Carlo simulation of realistic nanowires under an electromigration driving force, taking into account the factors that must be considered in order to ensure an accurate model of the interconnects in current and future integrated circuits. Preliminary results of our simulations of embedded aluminum nanoscale structures will be presented.

Abstract Author(s): Kristi Harris