Yoni Xiong
- Program Year: 3
- Academic Institution: Vanderbilt University
- Field of Study: Radiation Effects and Reliability
- Academic Advisor: Bharat Bhuva
- Practicum(s):
Sandia National Laboratories, New Mexico (2023) - Degree(s):
B.E. Electrical Engineering, Vanderbilt University, 2021
Publications
Journal Papers:Y. Xiong, N. Pieper, A. Feeley, B. Narasimham, D. Ball, B.L. Bhuva, "Single Event Upset Cross-Section Trends for D-FFs at the 5-nm and 7-nm Bulk FinFET Technology Nodes", Accepted by IEEE Transactions on Nuclear Science, Nov. 2022.
Y. Xiong, N. Pieper, M. McCurdy, D. Ball, B. Sierawski, B.L. Bhuva, "Evaluation of the Single-Event-Upset Vulnerability for Low-Energy Protons at the 7-nm and 5-nm Bulk FinFET Nodes", Submitted to IEEE Transactions on Nuclear Science, Oct. 2022.
Y. Xiong, N. Pieper, B. Narasimham, D. Ball, B.L. Bhuva, "Efficacy of Spatial and Temporal RHBD Techniques at Advanced Bulk FinFET Technology Nodes", Submitted to IEEE Transactions on Nuclear Science, Oct. 2022.
N. Pieper, Y. Xiong, J. Pasterenak, N. Dodds, D. Ball, B.L. Bhuva, "Single-Event Upsets for Single-Port and Two-Port SRAM Cells at the 5-nm FinFET Technology", Submitted to IEEE Transactions on Nuclear Science, Oct. 2022.
N. Pieper, Y. Xiong, A. Feeley, J. Pasterenak, N. Dodds, D. Ball, B.L. Bhuva, "Study of Multi-Cell Upsets in SRAM at a 5-nm Bulk FinFET Node", Submitted to IEEE Transactions on Nuclear Science, Oct. 2022.
Y. Xiong, A. Feeley, D. Ball, B.L. Bhuva, "Modeling Logic Error Single-Event Cross-Sections at the 7-nm Bulk FinFET Technology Node," Submitted to IEEE Transactions on Nuclear Science, July 2021.
A. Feeley, Y. Xiong, N. Guruswamy and B. L. Bhuva,"Effect of Frequency on Total Ionizing Dose Response of Ring Oscillator Circuits at the 7-nm Bulk FinFET Node." Submitted to IEEE Transactions on Nuclear Science, July 2021.
Y. Xiong et al., "Supply Voltage Dependence of Ring Oscillator Frequencies for Total Ionizing Dose Exposures for 7-nm Bulk FinFET Technology," in IEEE Transactions on Nuclear Science, vol. 68, no. 8, pp. 1579-1584, Aug. 2021.
Conference Proceedings:
Y. Xiong, Y. Chiang, N. Pieper, D. Ball, B.L. Bhuva, "Soft Error Rate Predictions for the Terrestrial Environment for the 3-nm Bulk FinFET Technology", Submitted to 2023 IEEE International Reliability Physics Symposium (IRPS), Oct 2022.
N. Pieper, Y. Xiong, J. Pasternak, B.L. Bhuva, "LET-Dependent Charge Collection at the 5-nm FinFET Node", Submitted to 2023 IEEE International Reliability Physics Symposium (IRPS), Oct 2022.
Y. Xiong et al., "Soft Error Characterization of D-FFs at the 5-nm Bulk FinFET Technology for the Terrestrial Environment," 2022 IEEE International Reliability Physics Symposium (IRPS), 2022, pp. 7C.3-1-7C.3-7.
N. J. Pieper, Y. Xiong, A. Feeley, D. R. Ball and B. L. Bhuva, "Single-Event Latchup Vulnerability at the 7-nm FinFET Node," 2022 IEEE International Reliability Physics Symposium (IRPS), 2022, pp. 5C.2-1-5C.2-6.
A. Feeley, Y. Xiong, N. Pieper, B. Narasimham, B.L. Bhuva, "Temperature Dependence of Soft Errors in 5-nm, 7-nm, and 16-nm Bulk FinFET Technology," Submitted to 2022 IEEE International Reliability Physics Symposium (IRPS), Oct. 2021.
N. Pieper, Y. Xiong, A. Feeley, D. Ball, B.L. Bhuva, "Latchup Vulnerability at the 7-nm FinFET Node," Submitted to 2022 IEEE International Reliability Physics Symposium (IRPS), Oct. 2021.
Xiong Y., Feeley A., Massengill L. W., Bhuva B. L., Wen S. . -J., and Fung R., "Frequency, LET, and Supply Voltage Dependence of Logic Soft Errors at the 7-nm Node," 2021 IEEE International Reliability Physics Symposium (IRPS), 2021, pp. 1-5.
Feeley A., Xiong Y., Bhuva B. L., Narasimham B., Wen S. . -J., and Fung R., "Effects of Temperature and Supply Voltage on Soft Errors for 7-nm Bulk FinFET Technology," 2021 IEEE International Reliability Physics Symposium (IRPS), 2021, pp. 1-5.
Conference Presentations:
Xiong Y., Pieper N., McCurdy M., Ball D., Sierawski B., Bhuva B.L., Low-Energy Proton-Induced Single-Event-Upsets at 7-nm and 5-nm Bulk FinFET Nodes, Presented at the 2022 IEEE Radiation Effects on Components & Systems (RADECS), Oral Presentation, Venice, Italy, Oct. 2022.
Xiong Y., Pieper N., Ball D., Narasimham B., Bhuva B.L., Efficacy of RHBD techniques at the 5-nm and 7-nm Bulk FinFET Technologies, Presented at the 2022 IEEE Radiation Effects on Components & Systems (RADECS), Oral Presentation, Venice, Italy, Oct. 2022.
Pieper N., Xiong Y., Pasternack J., Dodds N., Bhuva B.L., Comparison of Single Port and Two Port SRAM Single Event Vulnerability for the 5-nm FinFET Technology, Presented at the 2022 IEEE Radiation Effects on Components & Systems (RADECS), Oral Presentation, Venice, Italy, Oct. 2022.
Xiong Y., Pieper N., Feeley A., Ball D., Narasimham B., Bhuva B.L., Scaling Trends for Single Event Cross-Section for Conventional D-FFs at Bulk FinFET Technology Nodes, Presented at the 2022 Nuclear and Space Radiation Effects Conference (NSREC), Oral Presentation, Provo, UT, July 2022.
Pieper N., Xiong Y., Feeley A., Pasternack J., Bhuva B.L., SRAM Multi-Cell Upset Vulnerability at the 5-nm FinFET Node, Presented at the 2022 Nuclear and Space Radiation Effects Conference (NSREC), Poster Presentation, Provo, UT, July 2022.
Xiong Y., Feeley A., Pieper N., Ball D., Narasimham B., Brockman J., Dodds N., Wender S., Wen S.-J., Fung R., Bhuva B.L., Soft Error Characterization of D-FFs at the 5 nm Bulk FinFET Technology for the Terrestrial Environment, Presented at the 2022 IEEE International Reliability Physics Symposium (IRPS), Oral Presentation, Dallas, TX, March 2022.
Pieper N., Xiong Y., Feeley A., Ball D., Bhuva B.L., Latchup Vulnerability at the 7-nm FinFET node, Presented at the 2022 IEEE International Reliability Physics Symposium (IRPS), Oral Presentation, Dallas, TX, March 2022.
Xiong Y., Feeley A., Ball D. R., Massengill L.W., Bhuva B.L., Modeling Single-Event Cross-Sections for Logic Circuits at the 7-nm Bulk FinFET Technology Node, Presented at the 2021 Nuclear and Space Radiation Effects Conference (NSREC), Oral Presentation, Online, July 2021
Xiong Y., Feeley A., Wen S.-J., Fung R., Massengill L.W., and Bhuva B.L., Frequency, LET, and Supply Voltage Dependence of Logic Soft Errors at the 7-nm Node, Presented at the 2021 IEEE International Reliability Physics Symposium (IRPS), Poster presentation, Monterey, CA, March 2021.
Feeley A., Xiong Y., Narasimham B., Wen S.-J., Fung R., and Bhuva B.L., Effects of Temperature and Supply Voltage on Soft Errors for 7-nm Bulk FinFET Technology, Presented at the 2021 IEEE International Reliability Physics Symposium (IRPS), Poster presentation, Monterey, CA, March 2021.
Xiong Y., Feeley A., Wang P., Li X., Massengill L.W., and Bhuva B.L., Supply Voltage Dependence of RO Frequencies for Total Ionizing Dose Exposures for 7nm Bulk FinFET Technology, Presented at the 2020 IEEE Radiation Effects on Components & Systems (RADECS), Oral presentation, September 2020.
Awards
Russell G. Hamilton Scholar: 2021-2022DOE NNSA SSGF: 2021-2022
Dean's List Award, Vanderbilt University: 2019-2017
National Merit Scholar: 2017
Cornelius Vanderbilt Scholarship: 2021-2017
Vanderbilt Summer Research Program: 2019
Devon Energy Scholarship: 2021-2017