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Yoni Xiong

Headshot of Yoni Xiong
Program Years:
2021–2025
University:
Vanderbilt University
Field of Study:
Radiation Effects and Reliability
Advisor:
Bharat Bhuva
Degree(s):
B.E. Electrical Engineering, Vanderbilt University, 2021
M.S. Electrical Engineering, Vanderbilt University, 2023
Ph.D. Electrical Engineering, Vanderbilt University, 2025

Practicum Experience(s)

Sandia National Laboratories, New Mexico (2023)

Practicum Supervisor(s):
Nathan
Nowlin
Practicum Title:
Investigation of stuck bits in commercial 5-nm bulk FinFET SRAMs

Current Status

Status:
Senior Research Engineer at Sandia National Laboratories in ABQ, NM
Research Area:
Radiation Effects and Reliability
Personal URL:
https://yonixiong.com/
Contact Info:
https://www.linkedin.com/in/yonixiong/

Annual Program Review Abstracts

Fellow Presentation
: Assessment of Single-Particle Displacement Damage in 14-nm and 5-nm FinFET SRAMs (
2025
)
Fellow Poster
: Evaluation of Multi-Cell Upsets at the 5-nm Bulk FinFET Technology Node (
2024
)
Fellow Poster
: Response of 5-nm Bulk FinFET SRAMs to Extreme Ionizing and Non-Ionizing Doses (
2023
)
Fellow Poster
: Characterization of Single Event Effects at Advanced FinFET Technology Nodes (
2022
)